MCQ On Unit of Resistance

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Resistance is denoted by the letter ‘R’. The SI unit of resistance is Ohm (Volt per Ampere). The ‘Ohm’ has been taken from the name of German physicist George Simon Ohm. Resistance is also defined as a physical property of a material in which, the material resists the flow of electricity. Resistance is a scalar quantity which is expressed using a number with units.

MCQ On Unit of Resistance

Ques. The unit of resistance is (1 Mark)

Watt
Ohms
Ampere
Volt

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Ans. b. Ohms

Explanation: The SI unit of resistance is Ohm(Ω) and it is named after Georg Ohm.

Ques. Resistance can be defined as the (1 Mark)

Opposition to current flow
Resist rate of the voltage
Current acceptability of a voltage
Opposition to voltage flow

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Ans. a. Opposition to current flow

Explanation: The resistance is a measure of the total opposition to the current flowing in an electrical circuit.

Ques. Many resistors in a circuit, the resistance is (1 Mark)

Resistance is low
Resistance is high
Resistance is same
Resistance may change

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Ans. b. Resistance is high

Explanation: The Resistance will be maximum.

Ques. Which of the following specifies the formula of Ohm’s Law? (1 Mark)

V = I/R
R = VI
V = I*R
I = V/R

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Ans. d. V = 1*R

Explanation: The formula for Ohm’s law is written as V = IR. Ohm’s Law relates the voltage and current to the resistance in a circuit.

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Ques. The resistance of a material is most commonly determined by four factors-length, cross-sectional area, type of material and (1 Mark)

Temperature
Voltage
Type of supply
Current

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Ans. a. Temperature

Explanation: The four-factor can be understood by; Resistance=R=rho X (length/area)

Ques. The resistance of a conductor is proportional to its (1 Mark)

Area
Length
Current
Cross-Sectional Area

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Ans. b. Length

Explanation: The resistance of a wire/conductor is proportional to its length.

Ques. The resistance of a conductor is inversely proportional to (1 Mark)

Area
Length
Current
Cross-Sectional Area

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Ans. d. Cross-Sectional Area

Explanation: The resistance of a conductor is inversely proportional to a cross-sectional area

Ques. The resistivity of a material is defined as a (1 Mark)

The resistance between the opposite faces of a 1-meter cube at a specified temperature.
Amount of opposition to a flow of resistance through a 1-meter cube of the material.
The resistance between two faces of a 1 mm2 block of that material at 20 °C.
Resistance of 100 meters of 1.5 mm2 copper cable at a specified temperature.

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Ans. a. The resistance between the opposite faces of a 1-meter cube at a specified temperature.

Explanation: The resistivity of a material is defined as a resistance between the opposite faces of a 1-meter cube at a specified temperature.

Ques. The temperature coefficient of resistance of a material is defined as the change in (1 Mark)

Cross-sectional area per meter per degree Celsius
Temperature per degree per ohm
Length per meter per ohm resistance
Resistance per ohm per degree Celsius

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Ans. d. Resistance per ohm per degree Celsius

Explanation: The temperature coefficient of resistance of a material is defined as the change in resistance per ohm per degree celsius

Ques. The resistance of a coil copper wire is 30 Ω at 15ºC. Evaluate its resistance at 75ºC (1 Mark)

37.21W
42.18W
37.22W
42.19W

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Ans. 37.21W

Explanation: Formula to evaluate resistance is R = V/I

Ques. The temperature coefficient of resistance is defined as the change in (1 Mark)

Resistance per ohm per degree change in temperature
The coefficient of current allowed through a resistance
Temperature per degree per ohm resistance
The resistance of a voltage path per change in current in amperes

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Ans. a. Resistance per ohm per degree change in temperature

Explanation: The temperature coefficient of resistance is defined as the change in temperature.

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MCQ On Unit of Resistance

MCQ On Unit of Resistance

CBSE CLASS XII Related Questions

1.
Draw the number of scattered particles versus the scattering angle graph for scattering of alpha particles by a thin foil. Write two important conclusions that can be drawn from this plot.

2.
Two small identical metallic balls having charges \( q \) and \( -2q \) are kept far at a separation \( r \). They are brought in contact and then separated at distance \( \frac{r}{2} \). Compared to the initial force \( F \), they will now:

4.
The figure shows three point charges kept at the vertices of triangle ABC. The net electric field, due to this system of charges, at the midpoint M of base BC will be:

5.
Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))

6.
Draw a circuit diagram of a full-wave rectifier using p-n junction diodes. Explain its working and show the input-output waveforms.

Similar Physics Concepts

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MCQ On Unit of Resistance

MCQ On Unit of Resistance

CBSE CLASS XII Related Questions

1. Draw the number of scattered particles versus the scattering angle graph for scattering of alpha particles by a thin foil. Write two important conclusions that can be drawn from this plot.

2.Two small identical metallic balls having charges \( q \) and \( -2q \) are kept far at a separation \( r \). They are brought in contact and then separated at distance \( \frac{r}{2} \). Compared to the initial force \( F \), they will now:

4.The figure shows three point charges kept at the vertices of triangle ABC. The net electric field, due to this system of charges, at the midpoint M of base BC will be:

5.Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))

6.Draw a circuit diagram of a full-wave rectifier using p-n junction diodes. Explain its working and show the input-output waveforms.

Similar Physics Concepts

Comments

SUBSCRIBE TO OUR NEWS LETTER

1.
Draw the number of scattered particles versus the scattering angle graph for scattering of alpha particles by a thin foil. Write two important conclusions that can be drawn from this plot.

2.
Two small identical metallic balls having charges \( q \) and \( -2q \) are kept far at a separation \( r \). They are brought in contact and then separated at distance \( \frac{r}{2} \). Compared to the initial force \( F \), they will now:

4.
The figure shows three point charges kept at the vertices of triangle ABC. The net electric field, due to this system of charges, at the midpoint M of base BC will be:

5.
Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))

6.
Draw a circuit diagram of a full-wave rectifier using p-n junction diodes. Explain its working and show the input-output waveforms.