What is inductive resistance formula?

Inductive reactance is the resistance of an inductive circuit. It is also known simply as reactance. As it differs from the resistance given by any device, it is known as reactance. It’s denoted by XL. It is the opposition or resistance to a changing current flow offered by an inductor. The SI unit for inductive reactance is Ohm (Ω).

The formula for inductive reactance is:

XL = 2πfL

where f is the frequency of the alternating current (hz)

L is the inductance (h)

It is directly proportional to the frequency of the current and therefore inversely proportional to the time.

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What is inductive resistance formula?

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CBSE CLASS XII Related Questions

2.
Photoemission of electrons occurs from a metal (\( \phi_0 = 1.96 \, \text{eV} \)) when light of frequency \( 6.4 \times 10^{14} \, \text{Hz} \) is incident on it. Calculate: Energy of a photon in the incident light, The maximum kinetic energy of the emitted electrons, and The stopping potential.

3.
Write the expression for the magnetic field due to a current element in vector form. Consider a 1 cm segment of a wire, centered at the origin, carrying a current of 10 A in positive x-direction. Calculate the magnetic field \( \mathbf{B} \) at a point \( (1 \, \text{m}, 1 \, \text{m}, 0) \).

5.
If Bohr’s quantization postulate (angular momentum \( = \frac{nh}{2\pi} \)) is a basic law of nature, it should be equally valid for the case of planetary motion also. Why, then, do we never speak of quantization of orbits of planets around the Sun? Explain.

6.
Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))

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What is inductive resistance formula?

Related Questions

CBSE CLASS XII Related Questions

2.Photoemission of electrons occurs from a metal (\( \phi_0 = 1.96 \, \text{eV} \)) when light of frequency \( 6.4 \times 10^{14} \, \text{Hz} \) is incident on it. Calculate: Energy of a photon in the incident light, The maximum kinetic energy of the emitted electrons, and The stopping potential.

3.Write the expression for the magnetic field due to a current element in vector form. Consider a 1 cm segment of a wire, centered at the origin, carrying a current of 10 A in positive x-direction. Calculate the magnetic field \( \mathbf{B} \) at a point \( (1 \, \text{m}, 1 \, \text{m}, 0) \).

5. If Bohr’s quantization postulate (angular momentum \( = \frac{nh}{2\pi} \)) is a basic law of nature, it should be equally valid for the case of planetary motion also. Why, then, do we never speak of quantization of orbits of planets around the Sun? Explain.

6.Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))

Similar Physics Concepts

Comments

SUBSCRIBE TO OUR NEWS LETTER

2.
Photoemission of electrons occurs from a metal (\( \phi_0 = 1.96 \, \text{eV} \)) when light of frequency \( 6.4 \times 10^{14} \, \text{Hz} \) is incident on it. Calculate: Energy of a photon in the incident light, The maximum kinetic energy of the emitted electrons, and The stopping potential.

3.
Write the expression for the magnetic field due to a current element in vector form. Consider a 1 cm segment of a wire, centered at the origin, carrying a current of 10 A in positive x-direction. Calculate the magnetic field \( \mathbf{B} \) at a point \( (1 \, \text{m}, 1 \, \text{m}, 0) \).

5.
If Bohr’s quantization postulate (angular momentum \( = \frac{nh}{2\pi} \)) is a basic law of nature, it should be equally valid for the case of planetary motion also. Why, then, do we never speak of quantization of orbits of planets around the Sun? Explain.

6.
Suppose a pure Si crystal has \( 5 \times 10^{28} \) atoms per \( \text{m}^3 \). It is doped with \( 5 \times 10^{22} \) atoms per \( \text{m}^3 \) of Arsenic. Calculate majority and minority carrier concentration in the doped silicon. (Given: \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \))